Design of Ku-Band BiCMOS Low Noise Amplifier
نویسندگان
چکیده
منابع مشابه
Design of an S-band Ultra-low-noise Amplifier with Frequency Band Switching Capability
In this paper, an ultra-low-noise amplifier with frequency band switching capability is designed, simulated and fabricated. The two frequency ranges of this amplifier consist of the 2.4 to 2.5 GHz and 3.1 GHz to 3.15 GHz frequency bands. The designed amplifier has a noise figure of less than 1dB, a minimum gain of 23 dB and a VSWR of less than 2 in the whole frequency band. The design process s...
متن کاملDesign Of 11 GHz Ku-Band Amplifier
Abstarct Amplification is one of the most basic and prevalent RF/Microwave circuit functions. This paper describes the design of an 11 GHz PHEMT ATF-36077 microwave amplifier. The amplifier is manually designed using conventional technique, Smith chart was used to do a matching of the input and output of the amplifier. A completed design of the amplifier was optimised using Hewlett-Packard Adva...
متن کاملA Concurrent Dual-Band Low Noise Amplifier for GNSS Receivers
In this paper, a new design of concurrent dual-band Low Noise Amplifier (LNA) for multi-band single-channel Global Navigation Satellite System (GNSS) receivers is proposed. This new structure is able to operate concurrently at frequency of 1.2 and 1.57 GHz. Parallel and series resonance parts are employed in the input matching in order to achieve concurrent performance. With respect to used pse...
متن کاملA Ku-Band Low-Phase-Noise Wide-Tuning-Range VCO in SiGe BiCMOS Technology
—In this paper, design and fabrication of a Ku-band voltage-controlled oscillator (VCO) using commercially available 0.18 μm SiGe BiCMOS technology is presented. To achieve the low phase noise, the VCO employs a gm-boosted configuration which is a combination of cross coupled VCO and balanced Colpitts VCO, and the VCO simultaneously achieves wide tuning range. The tested results show that the ...
متن کاملA W-band Simultaneously Matched Power and Noise Low Noise Amplifier Using CMOS 0.13µm
A complete procedure for the design of W-band low noise amplifier in MMIC technology is presented. The design is based on a simultaneously power and noise matched technique. For implementing the method, scalable bilateral transistor model parameters should be first extracted. The model is also used for transmission line utilized in the amplifier circuit. In the presented method, input/output ma...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: The Journal of Korean Institute of Electromagnetic Engineering and Science
سال: 2011
ISSN: 1226-3133
DOI: 10.5515/kjkiees.2011.22.2.199